Annealing effects on the photoluminescence of gallium phosphide crystals.

Zince and oxygen doped gallium phosphide crystals were solution grown at 1170 C. Debye-Scherrer film and Laue patterns indicated that GaP single crystals were grown with the face parallel to a plane. Resistivity and Hall effect measurements were made from which carrier concentrations and mobilities...

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Bibliographic Details
Main Author: Hughes, Donald Leroy
Corporate Author: Lehigh University. Department of Metallurgy and Materials Science
Format: Thesis Book
Language:English
Published: 1970
Subjects:

Lehigh

Holdings details from Lehigh
Call Number: Electronic book
THESIS Reel no.80/4 FILM