Annealing effects on the photoluminescence of gallium phosphide crystals.
Zince and oxygen doped gallium phosphide crystals were solution grown at 1170 C. Debye-Scherrer film and Laue patterns indicated that GaP single crystals were grown with the face parallel to a plane. Resistivity and Hall effect measurements were made from which carrier concentrations and mobilities...
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Format: | Thesis Book |
Language: | English |
Published: |
1970
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