Some physical properties of silicon nitride thin films prepared by audio frequency sputtering in a nitrogen plasma.
Thin silicon nitride films have been deposited on silicon substrates by audio frequency reactive sputtering in a hollow cathode supported nitrogen plasma. All films were amorphous and had properies comparable to or better than that of films produced by other techniques.
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| Format: | Thesis Book |
| Language: | English |
| Published: |
1967
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